|
||
Original Article |
swartzk{at}ninds.nih.gov
Hanatoxin inhibits voltage-gated K+ channels by modifying the energetics of activation. We studied the molecular determinants and physical location of the Hanatoxin receptors on the drk1 voltage-gated K+ channel. First, we made multiple substitutions at three previously identified positions in the COOH terminus of S3 to examine whether these residues interact intimately with the toxin. We also examined a region encompassing S1–S3 using alanine-scanning mutagenesis to identify additional determinants of the toxin receptors. Finally, guided by the structure of the KcsA K+ channel, we explored whether the toxin interacts with the peripheral extracellular surface of the pore domain in the drk1 K+ channel. Our results argue for an intimate interaction between the toxin and the COOH terminus of S3 and suggest that the Hanatoxin receptors are confined within the voltage-sensing domains of the channel, at least 20–25 Å away from the central pore axis.
Key Words: gating modifier toxin scanning mutagenesis voltage-dependent gating protein–protein interaction
![]()
CiteULike
Complore
Connotea
Del.icio.us
Digg
Facebook
Reddit
Technorati
Twitter What's this?
This article has been cited by other articles:
![]() |
J. R. Winterfield and K. J. Swartz A Hot Spot for the Interaction of Gating Modifier Toxins with Voltage-Dependent Ion Channels J. Gen. Physiol., November 1, 2000; 116(5): 637 - 644. [Abstract] [Full Text] [PDF] |
||||
|
|