The Journal of General Physiology
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Published 1 June 2000. doi:10.1085/jgp.115.6.673
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© The Rockefeller University Press, 0022-1295/2000//673/ $5.00
Journal of General Physiology, Volume 115, Number 6, 2000


Original Article

Localization and Molecular Determinants of the Hanatoxin Receptors on the Voltage-Sensing Domains of a K+ Channel

Yingying Li-Smerina and Kenton J. Swartza

a Molecular Physiology and Biophysics Unit, National Institute of Neurological Disorders and Stroke, National Institutes of Health, Bethesda, Maryland 20892
Molecular Physiology and Biophysics Unit, National Institute of Neurological Disorders and Stroke, National Institutes of Health, Bldg. 36, Rm 2C19, 36 Convent Dr., MSC 4066, Bethesda, MD 20892.301-435-5666

swartzk{at}ninds.nih.gov

Hanatoxin inhibits voltage-gated K+ channels by modifying the energetics of activation. We studied the molecular determinants and physical location of the Hanatoxin receptors on the drk1 voltage-gated K+ channel. First, we made multiple substitutions at three previously identified positions in the COOH terminus of S3 to examine whether these residues interact intimately with the toxin. We also examined a region encompassing S1–S3 using alanine-scanning mutagenesis to identify additional determinants of the toxin receptors. Finally, guided by the structure of the KcsA K+ channel, we explored whether the toxin interacts with the peripheral extracellular surface of the pore domain in the drk1 K+ channel. Our results argue for an intimate interaction between the toxin and the COOH terminus of S3 and suggest that the Hanatoxin receptors are confined within the voltage-sensing domains of the channel, at least 20–25 Å away from the central pore axis.

Key Words: gating modifier toxin • scanning mutagenesis • voltage-dependent gating • protein–protein interaction


© 2000 The Rockefeller University Press


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J. R. Winterfield and K. J. Swartz
A Hot Spot for the Interaction of Gating Modifier Toxins with Voltage-Dependent Ion Channels
J. Gen. Physiol., November 1, 2000; 116(5): 637 - 644.
[Abstract] [Full Text] [PDF]



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