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Published 1 November 2000. doi:10.1085/jgp.116.5.623
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© The Rockefeller University Press, 0022-1295/2000//623/ $5.00
Journal of General Physiology, Volume 116, Number 5, 2000


Original Article

Molecular Coupling of S4 to a K+ Channel's Slow Inactivation Gate

Eli Lootsa and Ehud Y. Isacoffa

a Department of Molecular and Cell Biology, Physical Biosciences Division, Lawrence Berkeley National Laboratory, University of California, Berkeley, Berkeley, California 94720
Department of Molecular and Cell Biology, Physical Biosciences Division, Lawrence Berkeley National Laboratory, 271 Life Science Addition, MC 3200, University of California, Berkeley, Berkeley, CA 94720.(510) 642-4968

eisacoff{at}socrates.berkeley.edu

The mechanism by which physiological signals regulate the conformation of molecular gates that open and close ion channels is poorly understood. Voltage clamp fluorometry was used to ask how the voltage-sensing S4 transmembrane domain is coupled to the slow inactivation gate in the pore domain of the Shaker K+ channel. Fluorophores attached at several sites in S4 indicate that the voltage-sensing rearrangements are followed by an additional inactivation motion. Fluorophores attached at the perimeter of the pore domain indicate that the inactivation rearrangement projects from the selectivity filter out to the interface with the voltage-sensing domain. Some of the pore domain sites also sense activation, and this appears to be due to a direct interaction with S4 based on the finding that S4 comes into close enough proximity to the pore domain for a pore mutation to alter the nanoenvironment of an S4-attached fluorophore. We propose that activation produces an S4–pore domain interaction that disrupts a bond between the S4 contact site on the pore domain and the outer end of S6. Our results indicate that this bond holds the slow inactivation gate open and, therefore, we propose that this S4-induced bond disruption triggers inactivation.

Key Words: Shaker • rearrangement • voltage • gating • fluorescence


© 2000 The Rockefeller University Press


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